Dec 19, 2012– Tokyo, Japan (Techreleased) – Toshiba Corporation has added multi-bit (2-bit and 4-bit) flow-through type ESD (electrostatic discharge) diode products to its low capacitance and low clamp voltage Extreme High Speed series. The new products, DF6D7M1N (2-bit) and DF10G7M1N (4-bit), realize multiple diodes while maintaining the signal quality achieved by the low-inductance flow-through layout. Samples are available now with mass production scheduled for the end of December.
Applications
ESD protection for USB 3.0 and other interfaces
Key Features
- 1. Multi-bit, flow-through type
- 2. Low clamp voltage: VC=12V (typ.) at IEC61000-4-5 compliant (IPP=1A)
- 3. Suitable for high speed signal lines: Ct=0.3pF (typ.)
- 4. ESD-immunity level: ±8kV guaranteed at IEC61000-4-2 compliant (contact)
- 5. Small packages
-
- DF6D7M1N (2-bit) : DFN6 package (1.25mm×1.0mm×0.5mm)
- DF10G7M1N (4-bit) : DFN10 package (2.5mm×1.0mm×0.5mm)
Main specifications
Item | Value |
---|---|
Peak reverse voltage(VRRM) | 5.0V |
Reverse breakdown voltage(VBR) | 6.0V(min) @IBR=1mA |
Reverse current(IR) | 0.5µ(max) @VRWM=5V |
Diode capacitance(Ct) | 0.3pF(typ.) @VR=0V, f=1MHz |
Clamp voltage(VC) | 12V(typ.) @IPP=1A |