Toshiba ESD Protection Diodes
Toshiba ESD Protection Diodes

Dec 19, 2012– Tokyo, Japan  (Techreleased) – Toshiba Corporation has added multi-bit (2-bit and 4-bit) flow-through type ESD (electrostatic discharge) diode products to its low capacitance and low clamp voltage Extreme High Speed series. The new products, DF6D7M1N (2-bit) and DF10G7M1N (4-bit), realize multiple diodes while maintaining the signal quality achieved by the low-inductance flow-through layout. Samples are available now with mass production scheduled for the end of December.


ESD protection for USB 3.0 and other interfaces

Key Features

1. Multi-bit, flow-through type
2. Low clamp voltage: VC=12V (typ.) at IEC61000-4-5 compliant (IPP=1A)
3. Suitable for high speed signal lines: Ct=0.3pF (typ.)
4. ESD-immunity level: ±8kV guaranteed at IEC61000-4-2 compliant (contact)
5. Small packages
  • DF6D7M1N (2-bit) : DFN6 package (1.25mm×1.0mm×0.5mm)
  • DF10G7M1N (4-bit) : DFN10 package (2.5mm×1.0mm×0.5mm)

Main specifications

Item Value
Peak reverse voltage(VRRM) 5.0V
Reverse breakdown voltage(VBR) 6.0V(min) @IBR=1mA
Reverse current(IR) 0.5µ(max) @VRWM=5V
Diode capacitance(Ct) 0.3pF(typ.) @VR=0V, f=1MHz
Clamp voltage(VC) 12V(typ.) @IPP=1A