TK9J90E
TK9J90E

Toshiba Launches High Voltage MOSFETs “πMOS” series – Jul 22, 2013– Tokyo, Japan  (Techreleased) – Toshiba Corporation today announced that it has launched a new series of high voltage MOSFETs, “πMOS” series, and introduced “TK9J90E” as the initial product of the series. Mass production is scheduled to start in August, 2013.

TK9J90E
TK9J90E

Optimization of chip design reduces Ron·A (on resistance per area) by approximately 24% compared to a product[1] with an equivalent voltage. Reduction of Qg (gate charge) performance by approximately 24% improves turn off time (toff) by approximately 28%.

TK9J90E specifications

Part Number Package Absolute Maximum Ratings RDS(ON) Max (Ω) Qg Typ.
(nC)
Ciss Typ.
(pF)
VDSS (V) ID (A) VGS=10V
TK9J90E TO-3P(N) 900 9 1.3 46 2000

 

  • [1] Compared to “2SK3878”.