Toshiba Introduces 650V System Super Junction MOSFET “DTMOS ” Series – Jul 18, 2013– Tokyo, Japan (Techreleased) – Toshiba Corporation today announced that it has launched the 4th generation of its system super junction MOSFETs, the “DTMOS Ⅳ” series of 650V devices. The “TK14A65W” has been launched as the initial product in the series and full-scale mass production is scheduled to start in August, 2013.

TK14A65W
TK14A65W

Using the latest single epitaxial process, the series reduces the Ron·A (on resistance per area) by approximately 50%[2] compared to existing 650V “DTMOS Ⅱ” series. This allows a line-up of small packages, contributing improved power efficiency and downsizing of products into which they are integrated.

TK14A65W specifications

Part Number Package Absolute Maximum Ratings RDS(ON)
Max(Ω)
Qg
Typ.
(nC)
Ciss
Typ.
(pF)
VDSS (V) ID (A) VGS=10V
TK14A65W TO-220SIS 650 13.7 0.25 35 1300

 

Notes:

  • [1] As of July, 2013. Research by Toshiba Corporation.
  • [2] Compared to “TK17A65U”