Toshiba Introduces 30V Voltage Power MOSFETs for Base Stations and Servers – Jun 18, 2013– Tokyo, Japan  (Techreleased) – Toshiba Corporation today announced the introduction of a 30V voltage power MOSFET line-up for general-purpose DC-DC converters used in base stations and servers.

30V voltage power MOSFET
30V voltage power MOSFET

The products use the latest 8th generation low-voltage trench structure and achieve the highest class[Note 1] of low ON-resistance and high-speed switching. Mass production is scheduled to start at the end of June.

Features

  • Uses the 8th generation low-voltage trench structure and achieves top class[Note 1] low ON-resistance
  • Achieves low internal gate resistance and a low gate capacity ratio (Cgd/Cgs), which contributes to prevention of the self turn-on phenomenon

Specifications

Package Part number VPSS (V) VGSS
(V)
RDS(ON) (mΩ) Crss
(Typ.)
(pF)
Ciss
(Typ.)
(pF)
Qg
(VGS=4.5V)
(Typ.)
(nC)
rg
(Typ.)
(Ω)
VGS=10V VGS=4.5V
Typ. Max Typ. Max
SOP
Advance
TPH11003NL 30 ±20 9.4 11.0 12.6 16.0 18 510 3.3 1.3
TPH8R903NL 30 ±20 7.6 8.9 10.2 12.7 21 630 4.4 1.1
TPH6R003NL 30 ±20 5.2 6.0 6.8 8.3 37 1050 8.2 1.1
TSON
Advance
TPN11003NL 30 ±20 9.4 11.0 12.6 16.0 18 510 3.3 1.3
TPN8R903NL 30 ±20 7.6 8.9 10.2 12.7 21 630 4.4 1.1
TPN6R003NL 30 ±20 5.2 6.0 6.8 8.3 37 1050 8.2 1.1
SOP-8 TP89R103NL 30 ±20 7.8 9.1 10.4 12.9 21 630 4.4 1.1
TP86R203NL 30 ±20 5.4 6.2 7.0 8.5 37 1050 8.2 1.1