Toshiba Expands Family Of SiC Schottky Barrier Diode – Sep 19, 2013– Tokyo, Japan (Techreleased) – Toshiba Corporation today announced that it will expand its family of 650V silicon carbide (SiC) schottky barrier diodes (SBD) with the addition of a 10A product to the existing line-up of 6A, 8A and 12A products. Mass production shipments will start from today.

TRS10E65C
TRS10E65C

SBDs are suited for diverse applications, including power conditioners for photovoltaic power generation systems. They can also replace silicon diodes in switching power supplies, where they are 50% more efficient (Toshiba data).

SiC power devices offer more stable operation than current silicon devices–even at high voltages and currents–as they significantly reduce heat dissipation during operation. They meet diverse industry needs for smaller, more effective communications devices and their industrial applications range from servers to inverters.

New product

Part Number VRRM(V) IF(A) Electric Specifications Package
VF(V)
typ. / max
IRRM(µA)
typ. / max
TRS10E65C 650 10 1.5 / 1.7 0.42 / 90 TO-220 (2pin)

Current line-up

Part Number VRRM(V) IF(A) Electric Specifications Package
VF(V)
typ. / max
IRRM(µA)
typ. / max
TRS6E65C 650 6 1.5 / 1.7 0.3 / 90 TO-220 (2pin)
TRS8E65C 650 8 1.5 / 1.7 0.4 / 90
TRS12E65C 650 12 1.54 / 1.7 0.45 / 90