Toshiba SSM6N58NU
Toshiba SSM6N58NU

Mar 01, 2013– Tokyo, Japan  (Techreleased) – Toshiba Corporation today announced that it has launched a low capacitance dual N-ch MOSFET for high-speed switches in the high-current charging circuits of mobile devices, such as smartphones and tablets.

As additional functions are added to mobile devices, including smartphones, cellular phones, tablets and notebook PCs, and as increasing demands are made on the batteries of those devices, efforts continue to improve the user experience and cut charge times by boosting charge density and significantly increasing the charging current and frequency. Toshiba’s new low capacitance product “SSM6N58NU” is the company’s latest addition to its dual N-ch MOSFET line-up, suitable as high-speed switches for high-current charging circuits.

Applications

High-current (up to 4A) charging switches for mobile devices including smartphones, celluar phones, tablets and notebook PCs.

Key Features

High-current
Low ON-resistance
Low capacitance
Small package

Main specifications

Main Specifications of High-speed Dual N-ch MOSFET for DC-DC Converters: SSM6N58NU
Package Part number VDSS
(V)
VGSS
(V)
ID(DC)
(A)
RDS(ON) typ. (mΩ) Ciss
(pF)
Qg
@4A
(nC)
VGS=
1.8 V
VGS=
2.5 V
VGS=
4.5 V
The illustration of UDFN6 package.
SOT-1118
(UDFN6)
2.0×2.0mm
SSM6N58NU 30 ±12 4 112 84 67 129 1.8