TK55S10N1
TK55S10N1

Mar 06, 2013– Tokyo, Japan  (Techreleased) – Toshiba Corporation has launched a 100V low-ON-resistance, low-leakage power MOSFET using the latest trench MOS process as the latest addition to its line-up for automotive applications. The new product, “TK55S10N1”, achieves low ON-resistance with a combination of a chip in the “U-MOS Ⅷ-H series” fabricated with the latest 8th generation trench MOS process and a “DPAK+” package that utilizes copper connectors. The product is primarily suited for automotive applications, especially those that demand high-speed switching, such as switching regulators. Samples are available now with mass production scheduled to start in April 2013.

Polarity Part number Drain-to-source voltage VDSS (V) Drain Current ID (A) Series
Nch TK55S10N1 100 55 U-MOS-H

Key Features

Low ON-resistance (VGS=10V), RDS(ON) = 5.5mΩ(typ.)
Low leakage current IDSS=10µA (max) (VDS=rated voltage)
“DPAK+” package that realizes low-ON-resistance by utilizing Cu connectors.