Fujitsu Releases New 4 Mbit FRAM with Non-Volatile Memory with SRAM-Compatible Parallel Interface – Nov 13, 2013– Yokohama, Japan (Techreleased) – Fujitsu Semiconductor Limited announced the development of the MB85R4M2T, a 4 Mbit FRAM chip with an SRAM-compatible parallel interface. The new product will be made available in sample quantities starting January 2014. It uses a 44-pin TSOP package compatible with standard low-power SRAM, so it can substitute for SRAM in industrial machinery, office equipment, medical devices, security systems, and other equipment that currently uses SRAM. Because it stores data persistently with no need of a battery, it contributes to hardware that is more compact, less power-hungry, and lower in total cost.

Fujitsu MB85R4M2T
Fujitsu MB85R4M2T

FRAM is a type of memory that features both non-volatility, which allows data to be retained even when the power is switched off, and random access, which enables fast data writing. Because FRAM can safely store data that is being written even at sudden power source failures and power outages, it is possible to ensure the protection of parameter information and log data in equipment recorded immediately preceding a power source outage.

Fujitsu Semiconductor has added the 4 Mbit MB85R4M2T, which has an SRAM-compatible parallel interface, to its line of FRAM products. Because it uses a 44-pin TSOP package that is compatible with standard SRAM memory, it can substitute for SRAM, without major change in circuit board design, in any high reliability application using SRAM, such as industrial control units, multi-functional printers, medical devices, and building security systems. In addition, because it stores data with no need for battery power, it contributes to hardware that is more compact, less power-hungry, and lower in total cost, as described below.

  1. Reduced mounting area
    Because it removes the need for a battery to store data, the mounting area for memory and related components on PCB board in machinery can be reduced by 50% or more.
  2. Reduced power consumption
    SRAM requires data retention current in order to retain data in memory when main power is shut off, consuming roughly 15 µW. Because FRAM is non-volatile, it consumes zero electricity when off.
  3. Reduced total cost
    Eliminating the battery not only reduces the cost of parts, it also eliminates the periodic costs associated with replacement batteries and maintenance, reducing total costs of memory system in terms of both development and running.

Fujitsu Semiconductor continues to provide its customers with memory products and solutions that contribute to increased performance and reduced total costs in their end-products.

The FRAM product will be exhibited at “Embedded Technology 2013”, at Pacifico Yokohama convention center from November 20 to 22, 2013.

Fig.3 Power Consumption for Data Retention

           Fig.3 Power Consumption for Data Retention

Fig.2 Mounted Area Comparison

               Fig.2 Mounted Area Comparison

Fig. 4 Cost Comparison between Memory Systems

Fig. 4 Cost Comparison between Memory Systems

Sample Release Schedule

 
Product Name Availability
MB85R4M2T January 2014